esjc37 - 20 f 2 0 0 m a 20 kv 8 0ns high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 1 / 2 introduce : hvgt high voltage silicon rectifier diodes is made of high quality silicon chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers . f eatures: 1. high reliability design . 2. low vf . 3. h igh frequency . 4. conform to rohs and sgs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. g eneral purpose high voltage rectifier. 3. rectification for x - ray generator high voltage power supply . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 0. 65 grams (approx) . shape display: s ize: (unit:mm) hvgt name : do - 415 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 20 kv non - repetitive peak renerse voltage v r s m t a = 2 5c -- kv average forward current maximum i favm t a = 40 c 20 0 m a t oil = 5 5c -- m a non - repetitive forward surge current i fsm t a =25c ; 5 0 hz h alf - s ine w ave ; 8.3 ms 15 a junction temperature t j 1 25 c allowable operation case temperature tc - 40~+ 1 25 c storage temperature t stg - 40 ~ + 1 25 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f m at 25c ; at i favm 35 v maximum reverse current i r1 at 25c ; at v rrm 2.0 ua i r2 at 1 00 c ; at v rrm 10 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r 8 0 ns junction capacitance c j at 25c ; v r =0v ; f=1mhz 15 pf
esjc37 - 20 f 2 0 0 m a 20 kv 8 0ns high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 2 / 2 fig 1 fig 2 forward current derating curve reverse recovery measurement waveform typical data capture points: i f =0.5i r , i r ,i rr =0.25i r i r is typically the rated average forward current maximum (i favm ) of the d.u.t fig 3 non - repetitive surge current cycles ( 5 0hz) marking type code cathode mark esj c37 - 20 f esjc37 - 20 f hvgt
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